Artificial spin ice phase-change memory resistors

Abstract We present a proposal for realization of an electrical memory reminiscent memristor in connected Kagome artificial spin ice. show that current flowing through the system alters magnetic ensemble, which turns controls overall resistance thus leaving passage system. This introduces current-dependent effect dynamic resistive state. simulate spin-induced thermal phase-change mechanism, and athermal domain-wall inversion. In both cases we observe behavior with I – V hysteretic pinched loop, typical memristors. These results can be extended to more complex geometries ice designed engineer hysteresis curve.